Photoresist Product Engineer
Among other experience in engineering, chemical materials and semiconductors. Currently working in Shunyi District, Beijing, China.
Experience with Xiamen University
https://cn.linkedin.com/in/mark-neisser-27a1751
https://www.signalhire.com/profiles/mark-neisser%27s-email/149059458
https://www.spiedigitallibrary.org/profile/Mark.Neisser-32406
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Articles from Semi Engineering
https://semiengineering.com/manufacturing-bits-nov-2/
Going forward, the IRDS lithography roadmap outlines a probable scenario. “Extreme ultraviolet lithography (EUV) systems already in manufacturing use can resolve the smallest line and space dimension on the roadmap if double patterning is used. For contact holes and other hole type levels, double exposure with current tools can already resolve the minimum pitch needed until ‘1.5nm’ in 2025. The ‘1.5nm’ node will be doable with double exposure,” Neisser said in the paper.
Then, in 2025, the industry is expected to migrate to high-NA EUV, a next-generation version that uses a 0.55 NA lens. The current EUV tool uses a 0.33 NA lens.
High-NA EUV is expected to be the main lithographic option for devices until the so-called 0.7nm node in 2034, according to the roadmap. But there are several challenges in bringing up high-NA EUV scanners.
There are other issues. “The major lithographic challenges in the next 10 years are mostly related to noise and defects. Overlay is also expected to be a challenge,” Neisser said in the paper.
Engineer Mark Neisser Research
https://www.spiedigitallibrary.org/journals/journal-of-micro-nanopatterning-materials-and-metrology/volume-20/issue-04/044601/International-Roadmap-for-Devices-and-Systems-lithography-roadmap/10.1117/1.JMM.20.4.044601.full